목록 Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes Using Graded-Refractive-Index Layer by SiO2 Nanosphere Lithography 2013~ Author B.J. Kim, J. Bang, S.H. Kim, J. Kim Journal J. Electrochem. Soc. Link https://iopscience.iop.org/article/10.1149/1.3299327/meta 536회 연결 157, H449-H451